![]() Reading data out of the device is similar to r e a d in g fr o m an E P R O M. ![]() The device can be operated with a single 2.7V to 3.6V supply. To allow for simple in-system reprogrammability, the AT29BV020 does not require high input voltages for programming. The programming algorithm is compatible with other devices in Atmel’s Low Voltage Flash family of products. The device endurance is such that any sector can typically be written to in excess of 10,000 times. When the device is deselected, the CMOS standby current is less than 20 μA. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 250 ns, and a low 54 mW power dissipation. Its 2 megabits of memory is organized as 262,144 words by 8 bits. The AT29BV020 is a 2.7-volt-only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Internal Address and Data Latches for 256Bytesįast Sector Program Cycle Time - 20 ms Max.ĭATA Polling for End of Program DetectionĬMOS and TTL Compatible Inputs and OutputsĬommercial and Industrial Temperature Ranges Single Cycle Reprogram (Erase and Program) 1024 Sectors (256 bytes/sector) ![]() ∙ Single Supply Voltage, Range 2.7V to 3.6VĢ0 μA CMOS Standby Current ∙ Sector Program Operation
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